IRF9640PBF Vishay, IRF9640PBF Datasheet - Page 6
![P CHANNEL MOSFET, -200V, 11A TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF9640PBF
Manufacturer Part Number
IRF9640PBF
Description
P CHANNEL MOSFET, -200V, 11A TO-220
Manufacturer
Vishay
Specifications of IRF9640PBF
Transistor Polarity
P Channel
Continuous Drain Current Id
-11A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.5 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
38 ns
Rise Time
43 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9640PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF9640PBF
Manufacturer:
IR
Quantity:
11 200
Part Number:
IRF9640PBF
Manufacturer:
IR
Quantity:
20 000
IRF9640, SiHF9640
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 12a - Unclamped Inductive Test Circuit
- 10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
R
- 10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
I
AS
GD
D.U.T
G
L
0.01 Ω
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91086_12c
+
-
V
DS
This datasheet is subject to change without notice.
1600
1200
800
400
0
25
V
DD
Starting T
= - 50 V
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
125
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
- 4.9 A
- 7.0 A
- 11 A
Current regulator
I
D
0.2 µF
150
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S11-0513-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91086
D.U.T.
V
I
D
(BR)DSS
+
-
V
V
DD
DS