IRFB18N50KPBF Vishay, IRFB18N50KPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB18N50KPBF
• Description: N CHANNEL MOSFET, 500V, 17A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFB18N50KPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2830pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6.4 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.29Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB18N50KPBF

Diode Characteristics
Dynamic @ T

Document Number: 91100
‚
ƒ
Static @ T
Notes:
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
Symbol
I
I
V
t
Q
t
I
Symbol
V
∆V
R
V
DSS
GSS
S
SM
rr
on
Symbol
d(on)
r
d(off)
f
fs
SD
(BR)DSS
GS(th)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
DS(on)
Repetitive rating; pulse width limited by
I
T
max. junction temperature.
(BR)DSS
Starting T
SD
I
AS
J
eff.
≤ 150°C
≤ 17A, di/dt ≤ 376A/µs, V
= 17A,
/∆T
J
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
= 25°C, L = 2.5mH, R
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
DD
≤ V
G
(BR)DSS
= 25Ω,
,
„
…
†
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
as C
oss
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
500
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
6.4
Min. Typ. Max. Units
3.0
–––
–––
–––
–––
–––
θ
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
while V
2830 –––
3310 –––
0.59 –––
0.26 0.29
–––
–––
–––
–––
330
155
–––
–––
–––
520
–––
–––
–––
–––
–––
––– -100
5.3
38
22
60
45
30
93
DS
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
780
–––
250
100
1.5
8.0
5.0
34
54
17
50
68
is rising from 0 to 80% V
V/°C
nC
ns
µC
pF
ns
µA
µA
nA
V
S
Ω
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
Reference to 25°C, I
V
V
V
V
V
V
D
D
J
J
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
GS
GS
DS
DS
DS
GS
GS
= 17A
= 17A
= 25°C, I
= 25°C, I
= 7.5Ω
= 50V, I
= 400V
= 10V, See Fig. 6 and 13 „
= 250V
= 10V,See Fig. 10
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
= 10V, I
= V
= 500V, V
= 400V, V
= 0V, I
= 30V
= -30V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
DSS
Conditions
= 250µA
= 17A, V
= 17A
Conditions
= 10A
= 10A
= 250µA
GS
GS
= 0V to 400V …
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
.
= 0V
= 0V, T
D
www.vishay.com
GS
= 1mA
„
„
= 0V „
J
G
= 125°C
S
+L
D
D
S
)
2