IRLML5203PBF International Rectifier, IRLML5203PBF Datasheet

P CHANNEL MOSFET, -30V, 3A, SOT-23

IRLML5203PBF

Manufacturer Part Number
IRLML5203PBF
Description
P CHANNEL MOSFET, -30V, 3A, SOT-23
Manufacturer
International Rectifier
Datasheet

Specifications of IRLML5203PBF

Transistor Polarity
P Channel
Continuous Drain Current Id
-3A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
98mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-2.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
l
l
l
l
l
l
l
Description
Thermal Resistance
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallest footprint. This package, dubbed the Micro3
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
J,
DS
D
D
GS
θJA
@ T
@ T
Ultra Low On-Resistance
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
Halogen-Free
@T
@T
T
P-Channel MOSFET
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
ƒ
@ -10V
@ -10V
TM
,
* 
V
-30V

DSS
IRLML5203PbF
R
HEXFET Power MOSFET
DS(on)
165@V
-55 to + 150
98@V

Max.
Max.
'
100
1.25
0.80
-3.0
-2.4
± 20
-30
-24
10
GS
max (mW)
GS
= -10V
= -4.5V
Micro3
PD - 94895B
-3.0A
-2.6A
TM
05/13/10
mW/°C
I
Units
Units
°C/W
D
°C
V
A
V
1

Related parts for IRLML5203PBF

IRLML5203PBF Summary of contents

Page 1

... Power Dissipation 70°C Power Dissipation D A Linear Derating Factor V Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com IRLML5203PbF HEXFET Power MOSFET V R DSS DS(on) -30V 98@V 165 Max. @ -10V GS @ -10V GS 1.25 0.80 - 150 Max. ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP -15V -10V -7.0V -5.5V -4.5V -4.0V 10 -3.5V BOTTOM -2.7V 1 -2.70V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 ...

Page 4

1MHz iss rss oss ds gd 600 C iss 400 200 C oss C rss 0 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...

Page 6

-3.0A 0.09 0.08 0.07 4.0 6.0 8.0 10.0 12.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge ...

Page 7

Temperature ( °C ) Fig 14. Threshold Voltage Vs. Temperature www.irf.com -250µ 0.001 75 100 125 150 0.010 0.100 1.000 10.000 ...

Page 8

0.15 [0.006 Micro3 (SOT-23/TO-236AB) Part Marking Information ‚‡r†)ÃUuv†Ãƒh…‡Ã€h…xvtÃvs‚…€h‡v‚Ãhƒƒyvr†Ã‡‚Ãqr‰vpr†Ãƒ…‚qˆprqÃhs‡r…Ã!!%! 96U@Ã8P9@ Q6SUÃIVH7@S 8ˆÃXDS@ GPUÃ8P9@ C6GPB@Ià S@@ ...

Page 9

TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, ...

Related keywords