SI3433BDV-T1-GE3 Vishay, SI3433BDV-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI3433BDV-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 4.3A, TSOP
• Manufacturer: Vishay

Specifications of SI3433BDV-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 42mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 72027
S09-0766-Rev. D, 04-May-09
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Duty Cycle = 0.5
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Square Wave Pulse Duration (s)
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