SI4462DY-T1-GE3 Vishay, SI4462DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4462DY-T1-GE3
• Description: N CHANNEL MOSFET, 200V, 1.5A, SOIC
• Manufacturer: Vishay

Specifications of SI4462DY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 480mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72093
S09-0705-Rev. C, 27-Apr-09
0.1
0.8
0.6
0.4
0.2
0.0
10
5
1
8
6
4
2
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 1.5 A
0.2
On-Resistance vs. Drain Current
= 100 V
1
T
1
J
V
= 150 °C
SD
Q
V
g
0.4
GS
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
2
I
D
Gate Charge
= 6 V
- Drain Current (A)
2
0.6
3
3
0.8
4
T
V
J
GS
= 25 °C
4
1.0
5
= 10 V
1.2
6
5
2.5
2.1
1.7
1.3
0.9
0.5
0.8
0.6
0.4
0.2
0.0
400
300
200
100
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 1.5 A
C
rss
= 10 V
2
V
V
GS
DS
T
20
0
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
25
Capacitance
4
C
iss
50
C
Vishay Siliconix
40
oss
I
D
6
75
= 1.5 A
Si4462DY
www.vishay.com
100
60
8
125
150
10
80
3