SI4490DY-T1-E3 Vishay, SI4490DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4490DY-T1-E3
• Description: N CHANNEL MOSFET, 200V, 4A, SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI4490DY-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.85A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.85 A
• Power Dissipation: 1560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.08Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4490DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71341
S09-0705-Rev. C, 27-Apr-09
0.20
0.15
0.10
0.05
0.00
20
16
12
50
10
8
4
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 4.0 A
0.2
On-Resistance vs. Drain Current
= 100 V
8
V
15
T
SD
Q
J
g
V
I
= 150 °C
0.4
- Source-to-Drain Voltage (V)
D
- Total Gate Charge (nC)
GS
- Drain Current (A)
Gate Charge
16
= 6 V
0.6
30
24
0.8
V
T
45
GS
J
32
= 25 °C
= 10 V
1.0
40
1.2
60
2500
2000
1500
1000
500
0.25
0.20
0.15
0.10
0.05
0.00
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 4.0 A
C
= 10 V
rss
40
V
2
DS
V
T
0
J
GS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
80
4
C
C
50
oss
Vishay Siliconix
iss
120
I
D
6
75
= 4.0 A
Si4490DY
100
www.vishay.com
160
8
125
200
150
10
3