SI4800BDY-T1-E3 Vishay, SI4800BDY-T1-E3 Datasheet

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SI4800BDY-T1-E3

Manufacturer Part Number
SI4800BDY-T1-E3
Description
N CHANNEL MOSFET, 30V, 9A, SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4800BDY-T1-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
18.5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.8V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18.5 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
1.8V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0185 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
6.5 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4800BDY-T1-E3TR

Available stocks

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Manufacturer
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Price
Part Number:
SI4800BDY-T1-E3
Manufacturer:
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2 500
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Manufacturer:
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Quantity:
20 000
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Part Number:
SI4800BDY-T1-E3
Quantity:
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Company:
Part Number:
SI4800BDY-T1-E3
Quantity:
6 440
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
30
(V)
G
S
S
S
1
2
3
4
N-Channel Reduced Q
0.0185 at V
0.030 at V
Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
SO-8
R
DS(on)
J
a, b
= 150 °C)
GS
a
GS
(Ω)
= 4.5 V
= 10 V
8
7
6
5
D
D
D
D
a, b
a, b
A
I
= 25 °C, unless otherwise noted
D
Steady State
Steady State
9
7
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
g
, Fast Switching MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
• High-Efficient PWM Optimized
• 100 % UIS and R
G
Symbol
Symbol
T
R
R
J
Available
TrenchFET
V
V
E
I
I
P
, T
N-Channel MOSFET
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
D
S
®
Power MOSFET
Typ.
10 s
7.0
2.3
2.5
1.6
40
70
24
9
g
Tested
- 55 to 150
Limits
11.25
± 25
30
40
15
Steady State
Max.
6.5
5.0
1.3
0.8
50
95
30
Vishay Siliconix
Si4800BDY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4800BDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) Avalanche Current Single-Pulse Avalanche Energy ...

Page 2

... Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Drain Current (A) D On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge Document Number: 72124 S-83039-Rev. H, 29-Dec- Si4800BDY Vishay Siliconix ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 1200 1000 C iss 800 600 400 C oss 200 C rss 0 ...

Page 4

... Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 I 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 = 250 µ 100 125 150 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72124. Document Number: 72124 S-83039-Rev. H, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4800BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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