SI7898DP Vishay, SI7898DP Datasheet - Page 4

• Manufacturer Part Number: SI7898DP
• Description: N CH MOSFET
• Manufacturer: Vishay

Specifications of SI7898DP

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.8A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 85mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si7898DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.5
- 1.0
- 1.5
1.0
0.5
0.0
0.01
- 50
0.1
2
1
10
- 4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
- 3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 μA
75
0.01
100
0.1
10
0.01
1
10
100
- 2
125
Limited by
Single Pulse
R
T
DS ( on)
C
0.1
V
= 25 °C
DS
Square Wave Pulse Duration (s)
150
-
Safe Operating Area
Drain-to-Source V oltage (V)
10
- 1
1
10
200
160
120
80
40
0
1
0.001
100
Single Pulse Power, Junction-to-Ambient
100
10 μs
1 ms
10 ms
100 ms
1 s
10 s
100 s, DC
1000
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (s)
- T
t
1
A
0.1
S09-0227-Rev. D, 09-Feb-09
= P
t
2
Document Number: 71873
DM
Z
th JA
thJA
100
t
t
1
2
(t )
= 65 °C/W
1
600
10