ZXM62P03E6 Diodes Inc, ZXM62P03E6 Datasheet - Page 4

• Manufacturer Part Number: ZXM62P03E6
• Description: MOSFET, P CH, 30V, -1.5A, SOT-23
• Manufacturer: Diodes Inc

Specifications of ZXM62P03E6

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -1.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 806mW
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
amb
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated)
2%.
4
MIN.
-1.0
-30
1.1
TYP.
13.9
10.3
19.9
330
120
2.8
6.4
45
13
MAX.
-0.95
0.15
0.23
10.2
1.5
-1
100
3
UNIT CONDITIONS
V
µA
nA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
ZXM62P03E6
I
V
V
I
V
V
V
V
f=1MHz
V
R
(Refer to test circuit)
V
I
(Refer to test circuit)
T
V
T
di/dt= 100A/µs
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
=-250µA, V
=-250µA, V
=-1.6A
=25°C, I
=25°C, I
=6.2Ω, R
S E M I C O N D U C T O R S
=-30V, V
= 20V, V
=-10V, I
=-4.5V, I
=-10V,I
=-25 V, V
=-24V,V
=0V
=-15V, I
S
F
=-1.6A,
D
=-1.6A,
D
D
GS
=-0.8A
D
GS
D
=25Ω
GS
DS
=-1.6A
GS
DS
=-1.6A
=-0.8A
=-10V,
=0V
= V
=0V
=0V,
=0V
GS