ZXMN10A07F Diodes Inc, ZXMN10A07F Datasheet - Page 4

• Manufacturer Part Number: ZXMN10A07F
• Description: N CH MOSFET, 100V, 800mA, SOT-23
• Manufacturer: Diodes Inc

Specifications of ZXMN10A07F

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 640mA
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN10A07F
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
300 s; duty cycle
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
4
MIN.
2% .
100
2.0
TYP.
0.85
138
1.6
1.8
1.5
4.1
2.1
2.9
0.7
12
27
12
6
1
MAX.
0.95
100
4.0
0.7
0.9
1
UNIT
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt=100A/ s
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
=1A
=250 A, V
=250 A, V
=25°C, I
=25°C, I
=6.0 , V
=100V, V
= 20V, V
=10V, I
=6V, I
=15V,I
=50 V, V
=50V, I
=50V,V
=0V
ISSUE 5 - JULY 2003
CONDITIONS
D
S
S
D
D
D
=1.5A,
=1.8A,
=1A
GS
=1A
GS
=1.5A
=1A
GS
GS
DS
GS
DS
=10V,
=10V
=0V,
=0V
=V
=0V
=0V
GS