ZXMN3A01F Diodes Inc, ZXMN3A01F Datasheet - Page 2

• Manufacturer Part Number: ZXMN3A01F
• Description: N CHANNEL MOSFET, 30V, 2A, SOT-23
• Manufacturer: Diodes Inc

Specifications of ZXMN3A01F

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 120mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ZXMN3A01F
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
A
A
=25°C (a)
=25°C (b)
V
V
GS
GS
GS
=10V; T
=10V; T
=10V; T
A
A
A
=70°C (b)
=25°C (a)
=25°C (b)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
:T
JA
JA
stg
-55 to +150
VALUE
LIMIT
200
155
625
806
2.0
1.6
1.8
1.3
6.4
30
8
8
5
20
ISSUE 2 - JULY 2002
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
mW
mW
°C
V
V
A
A
A
A