ZXMN3A03E6 Diodes Inc, ZXMN3A03E6 Datasheet - Page 4

• Manufacturer Part Number: ZXMN3A03E6
• Description: MOSFET, N CH, 30V, 4.6A, SOT-23
• Manufacturer: Diodes Inc

Specifications of ZXMN3A03E6

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 1.7W
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN3A03E6
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state resistance
Forward transconductance
DYNAMIC
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate-drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
Reverse recovery time
Reverse recovery charge
S E M I C O N D U C T O R S
(3)
(2) (3)
(1)
(3)
(3)
(1)(3)
(at T
(1)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
A
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
4
MIN.
30
1
TYP.
58.5
16.0
11.2
12.6
0.85
18.8
14.1
600
104
2.9
6.4
6.9
2.0
2.0
10
MAX. UNIT CONDITIONS.
0.050
0.065
0.95
100
0.5
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 3 - OCTOBER 2005
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/µs
D
D
D
D
J
J
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
=3.5A
=3.5A
=250 A, V
=250 A, V
=25°C, I
=25°C, I
=6.0 , V
=30V, V
=10V,I
=25 V, V
=15V,V
=15V,V
= 20V, V
=10V, I
=4.5V, I
=0V
=15V, I
D
S
F
D
GS
GS
=3.5A,
=3.2A,
=7.8A
D
GS
GS
D
=7.8A
GS
GS
DS
=3.5A
=6.8A
DS
=5V,
=10V,
=10V
=0V
=0V,
=0V
= V
=0V
GS