ZXMN6A11G Diodes Inc, ZXMN6A11G Datasheet - Page 4

• Manufacturer Part Number: ZXMN6A11G
• Description: MOSFET, N CH, 60V, 4.4A, SOT-223
• Manufacturer: Diodes Inc

Specifications of ZXMN6A11G

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.4A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 140mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 3.9W
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN6A11G
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(3)
(1)
(2) (3)
(1)
(3)
(3)
(3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
4
MIN.
1.0
60
TYP.
35.2
17.1
1.95
1.25
0.86
0.85
21.5
20.5
330
4.9
3.5
8.2
4.6
3.0
5.7
MAX.
0.140
0.250
0.95
100
1
UNIT
nA
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 3 - NOVEMBER 2004
I
V
V
I
V
V
V
V
f=1MHz
V
R
(refer to test circuit)
V
I
V
I
(refer to test circuit)
T
V
T
di/dt= 100A/µs
D
D
D
D
J
J
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
=2.5A
=250 A, V
=250 A, V
=2.5A
=25°C, I
=25°C, I
=6.0 , V
=60V, V
=15V,I
=40 V, V
=15V, V
=15V,V
=±20V, V
=10V, I
=4.5V, I
=0V
=30V, I
CONDITIONS.
D
S
F
D
GS
=2.5A,
=2.8A,
=2.5A
D
GS
GS
D
GS
=4.4A
GS
GS
DS
=3.8A
=2.5A
DS
=10V,
=10V
=0V
=5V,
= V
=0V,
=0V
=0V
GS