FDD6692 Fairchild Semiconductor, FDD6692 Datasheet - Page 17

N CHANNEL MOSFET, 30V, 54A

FDD6692

Manufacturer Part Number
FDD6692
Description
N CHANNEL MOSFET, 30V, 54A
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDD6692

Transistor Polarity
N Channel
Continuous Drain Current Id
54A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
12mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
57W
Current Rating
54A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD6692
Manufacturer:
FAIRCHILD
Quantity:
8 000
www.fairchildsemi.com
TSSOP-8
FDW2501NZ
FDW2501N
FDW2503NZ
FDW2503N
FDW2510NZ
FDW9926A
FDW2507N
FDW2507NZ
FDW2509NZ
FDW2515NZ
FDW2516NZ
FDW9926NZ
FDW2520C
FDW2521C
FDW256P
FDW2506P
FDW2502P
FDW2504P
FDW264P
FDW254P
FDW254PZ
FDW252P
FDW262P
FDW2508P
FDW258P
TSSOP-8 N-Channel
TSSOP-8 Complementary N- and P-Channel
TSSOP-8 P-Channel
Products
Min. (V)
20 | -20
20 | -20
BV
-30
-20
-20
-20
-20
-20
-20
-20
-20
-12
-12
20
20
20
20
20
20
20
20
20
20
20
20
DSS
Dual Common Drain
Dual Common Drain
Dual Common Drain
Dual Common Drain
Dual Common Drain
Dual Common Drain
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
0.0135
10V
0.018 | 0.035
0.021 | 0.043
R
DS(ON)
0.0125
4.5V
0.018
0.018
0.021
0.024
0.032
0.019
0.019
0.028
0.032
0.022
0.035
0.043
0.012
0.012
0.047
0.018
0.011
0.02
0.02
0.03
0.02
0.01
2-12
Max (Ω) @ V
0.028 | 0.057
0.035 | 0.07
0.0145
2.5V
0.025
0.028
0.026
0.035
0.032
0.045
0.023
0.023
0.026
0.038
0.045
0.033
0.057
0.015
0.015
0.018
0.065
0.022
0.014
0.04
0.07
GS
Bold = New Products (introduced January 2003 or later)
=
0.0215
0.0215
1.8V
Discrete Power Products –
0.03
0.02
0.1
Q
@V
g
12 | 9.7
14 | 14
Typ. (nC)
GS
8.2
6.1
5.7
9.7
12
12
20
13
28
14
95
60
13
61
12
12
20
21
60
41
26
9
9
= 5V
5.5 | 3.8
I
6 | 4.4
D
5.5
5.5
5.5
6.4
4.5
7.5
7.5
7.1
5.8
5.8
4.5
5.3
4.4
3.8
9.7
9.2
9.2
8.8
4.5
6
8
6
9
(A)
MOSFETs
P
D
1.6
1.6
1.6
1.6
1.6
1.6
1.3
1.3
1.3
1.4
1.3
1.3
1.3
1.3
1
1
1
1
1
1
1
1
1
1
1
(W)

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