IRF9240 International Rectifier, IRF9240 Datasheet - Page 2

• Manufacturer Part Number: IRF9240
• Description: P CH MOSFET, -200V, 11A, TO-204AA
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRF9240

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.58Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 11A
• Power Dissipation: 125W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2 +Tab
• Package Type: TO-204AA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
Thermal Resistance
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
IRF9240
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
L S + L D
C iss
C oss
C rss
R thJC
R thJA
t f
BV DSS / T J
I S
I SM
V SD
t rr
Q RR
t o n
(off)
(on)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Ambient
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
@ Tj = 25°C (Unless Otherwise Specified)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
-200
Min
-2.0
4.0
3.0
4.5
2 8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
270
—
—
—
—
-0.20
1200
Typ Max Units
570
6.1
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8 1
30
-4.6
440
-11
-44
7.2
0.58
-250
-100
°C/W
-4.0
100
-25
0.5
6 0
1 5
3 8
3 5
8 5
8 5
6 5
—
—
—
—
—
—
nS
µC
V
A
V/°C
S ( )
nH
nA
nC
n s
V
pF
V
A
soldered to a 2” square copper-clad board
T j = 25°C, I F = -11A, di/dt
T
j
= 25°C, I S =-11A, V GS = 0V
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Reference to 25°C, I D = -1.0mA
V GS = -10V, I D = -11A
V DS = V GS , I D = -250µA
V DS > -15V, I DS = -7.0A
V GS = -10V, I D = -7.0A
V DD = -100V, I D = -11A,
Test Conditions
Test Conditions
V GS = 0V, I D = -1.0mA
V GS =-10V, ID = -11A
V GS = 0V, V DS = -25V
V GS = 0V, T J = 125°C
V DS =-160V, V GS =0V
Test Conditions
V DD
V DS =-160V
V DS =-100V
V GS = -20V
f = 1.0MHz
V GS = 20V
R G = 9.1
-50V
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-100A/ s