SUD50P06-15L-GE3 Vishay, SUD50P06-15L-GE3 Datasheet - Page 4

• Manufacturer Part Number: SUD50P06-15L-GE3
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SUD50P06-15L-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Power Dissipation Pd: 3W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50P06-15L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72250.
www.vishay.com
4
0.01
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
2
1
0
10
- 50 - 25
0
-4
Duty Cycle = 0.5
0.2
0.1
On-Resistance vs. Junction Temperature
Maximum Avalanche and Drain Current
V
I
D
GS
= 17 A
25
Single Pulse
= 10 V
0.02
0
T
T
J
vs. Case Temperature
50
C
- Junction Temperature (°C)
25
- Case Temperature (°C)
0.05
75
50
75
100
10
Normalized Thermal Transient Impedance, Junction-to-Case
100
-3
125
125
150
150
175
175
Square Wave Pulse Duration (s)
10
-2
100
100
10
10
1
1
0.1
0.0
Limited by
* V
Limited
I
D(on)
GS
Source-Drain Diode Forward Voltage
> minimum V
V
0.3
T
R
DS
J
V
DS(on) *
= 150 °C
SD
T
Single Pulse
- Drain-to-Source Voltage (V)
Safe Operating Area
C
- Source-to-Drain Voltage (V)
= 25 °C
1
0.6
GS
10
at which R
-1
BVDSS Limited
0.9
S10-2545-Rev. C, 08-Nov-10
10
DS(on)
T
Document Number: 72250
J
= 25 °C
is specified
I
1.2
DM
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
100
1.5
1