SUP53P06-20-E3 Vishay, SUP53P06-20-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP53P06-20-E3
• Description: MOSFET, P, TO-220
• Manufacturer: Vishay

Specifications of SUP53P06-20-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 53A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 19.5mohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Operating Temperature Range: -55°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0195 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68633
S-80897-Rev. A, 21-Apr-08
0.05
0.04
0.03
0.02
0.01
0.00
200
160
120
80
40
10
0
8
6
4
2
0
0
0
0
On-Resistance vs. Drain Current
20
1
1
V
V
Transfer Characteristics
DS
Output Characteristics
GS
T
T
C
C
- Drain-to-SourceVoltage (V)
- Gate-to-Source Voltage (V)
= 25 °C
V
= 125 °C
V
I
GS
GS
D
40
- Drain Current (A)
2
2
= 4.5 V
= 10 V
V
GS
= 10 thru 6 V
60
3
3
T
C
V
V
= - 55 °C
GS
GS
80
= 3 V
= 4 V
4
4
V
GS
= 5 V
New Product
100
5
5
5000
4000
3000
2000
1000
100
100
80
60
40
20
80
60
40
20
0
0
0
0
0
0
C
T
rss
C
= 25 °C
10
12
1
V
V
C
C
Transfer Characteristics
GS
DS
oss
iss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
T
20
Transconductance
T
C
T
I
C
C
D
Capacitance
= 125 °C
24
= 25 °C
- Drain Current (A)
2
= - 55 °C
SUP53P06-20
30
Vishay Siliconix
36
3
40
T
www.vishay.com
C
T
C
= 125 °C
48
= - 55 °C
4
50
60
60
5
3