IRF624PBF Vishay, IRF624PBF Datasheet - Page 5

• Manufacturer Part Number: IRF624PBF
• Description: N CHANNEL MOSFET, 250V, 4.4A TO-220
• Manufacturer: Vishay

Specifications of IRF624PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.4A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 1.1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 260pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF624PBF

Document Number: 91029
S11-0509-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91029_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
5.0
4.0
3.0
2.0
1.0
0.0
25
91029_11
10
0.1
10
50
-2
T
1
10
C
, Case Temperature (°C)
-5
0.05
0.02
0.01
0 − 0.5
0.2
0.1
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
125
Single Pulse
(Thermal Response)
This datasheet is subject to change without notice.
150
10
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
IRF624, SiHF624
j
1
= P
P
D.U.T.
DM
DM
www.vishay.com/doc?91000
R
Vishay Siliconix
D
x Z
t
t
d(off)
1
1
thJC
/t
2
t
2
+ T
t
f
C
10
+
-
www.vishay.com
V
DD
5