IRF634STRLPBF Vishay, IRF634STRLPBF Datasheet - Page 7

• Manufacturer Part Number: IRF634STRLPBF
• Description: N CH MOSFET, 250V, 8.1A, SMD-220
• Manufacturer: Vishay

Specifications of IRF634STRLPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.1A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91035.
Document Number: 91035
S10-2695-Rev. B, 29-Nov-10
V
Fig. 13a - Basic Gate Charge Waveform
GS
V
G
Q
GS
Charge
Q
Q
GD
G
Re-applied
voltage
Reverse
recovery
current
+
-
R
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Fig. 14 - For N-Channel
Period
Body diode forward
+
-
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
SD
current
controlled by duty factor “D”
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
g
Period
P.W.
+
12 V
Fig. 13b - Gate Charge Test Circuit
V
V
I
V
SD
GS
GS
Same type as D.U.T.
DD
Current regulator
= 10 V
+
-
0.2 µF
V
DD
a
IRF634S, SiHF634S
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
Vishay Siliconix
D.U.T.
I
D
+
-
www.vishay.com
V
DS
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