IRF710STRLPBF Vishay, IRF710STRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF710STRLPBF
• Description: N CHANNEL MOSFET, 400V, 2A, SMD-220
• Manufacturer: Vishay

Specifications of IRF710STRLPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 3.6ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 3.6 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF710S, SiHF710S
Vishay Siliconix
www.vishay.com
4
91042_05
91042_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
400
300
200
100
20
16
12
0
8
4
0
10
0
I
0
D
= 2.0 A
V
DS ,
2
Q
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
4
= 80 V
V
V
C
C
C
DS
GS
iss
rss
oss
= 200 V
6
= 0 V, f = 1 MHz
= C
= C
= C
C
C
C
iss
oss
rss
10
gs
V
gd
ds
DS
1
+ C
+ C
= 320 V
8
gd
gd
For test circuit
see figure 13
, C
ds
10
Shorted
12
91042_07
91042_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
-1
0
1
2
5
2
5
2
5
2
0.4
Fig. 8 - Maximum Safe Operating Area
1
150
2
°
V
V
C
SD
DS
0.6
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
5
10
T
T
Single Pulse
0.8
C
J
25
by R
= 150 °C
= 25 °C
2
°
C
DS(on)
5
1.0
S-83000-Rev. A, 19-Jan-09
Document Number: 91042
10
2
2
1.2
V
GS
= 0 V
1
100
10
5
ms
ms
10
1.4
µs
3