IRF744 Vishay, IRF744 Datasheet - Page 3

• Manufacturer Part Number: IRF744
• Description: N CHANNEL MOSFET, 450V, 8.8A TO-220
• Manufacturer: Vishay

Specifications of IRF744

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.8A
• Drain Source Voltage Vds: 450V
• On Resistance Rds(on): 630mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF744

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91056
S-83029-Rev. A, 19-Jan-09
91056_01
91056_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
1
0
10
10
Top
Bottom
0
Top
Bottom
0
V
V
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS ,
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
GS
V
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
150 °C
C
C
= 150 °C
4.5 V
4.5 V
= 25 °C
91056_04
91056_03
Fig. 4 - Normalized On-Resistance vs. Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
1
0
- 60 - 40 - 20 0
Fig. 3 - Typical Transfer Characteristics
4
150
I
V
D
GS
= 8.8 A
°
= 10 V
C
V
5
T
GS ,
J ,
25
Junction Temperature (°C)
Gate-to-Source Voltage (V)
°
C
6
20 40 60 80 100 120 140 160
IRF744, SiHF744
7
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
10
3