IRF820A Vishay, IRF820A Datasheet - Page 2

• Manufacturer Part Number: IRF820A
• Description: N CHANNEL MOSFET, 500V, 2.5A TO-220
• Manufacturer: Vishay

Specifications of IRF820A

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRF820A

IRF820A, SiHF820A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. C
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2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
C
ΔV
R
V
oss
R
t
t
R
R
C
C
C
I
I
C
C
V
GS(th)
DS(on)
Q
Q
V
d(on)
d(off)
I
GSS
DSS
g
Q
Q
DS
t
SM
I
t
thCS
thJC
t
t
thJA
DS
oss
oss
oss
SD
on
rss
S
iss
gd
rr
fs
gs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
V
V
V
V
V
R
= 25 °C, I
GS
GS
DS
GS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
GS
g
V
J
Reference to 25 °C, I
GS
= 21 Ω, R
= 25 °C, I
= 400 V, V
= 10 V
= 10 V
= 0 V; V
= 0 V; V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
= 0 V; V
TYP.
DD
0.50
TEST CONDITIONS
DS
DS
DS
GS
oss
-
-
F
= 250 V, I
= 500 V, V
= V
= 50 V, I
= 0 V, I
while V
V
= 2.5 A, dI/dt = 100 A/μs
V
DS
DS
GS
V
DS
D
S
GS
GS
GS
DS
= 400 V, f = 1.0 MHz
= 2.5 A, V
= 1.0 V, f = 1.0 MHz
= 97 Ω, see fig. 10
I
= ± 30 V
D
, I
= 25 V,
= 0 V,
= 0 V, T
= 0 V to 400 V
= 2.5 A, V
D
D
see fig. 6 and 13
DS
D
= 250 μA
D
= 250 μA
= 1.5 A
GS
is rising from 0 % to 80 % V
= 2.5 A,
I
D
D
= 0 V
= 1.5 A
GS
J
= 1 mA
G
= 125 °C
DS
= 0 V
b
= 400 V,
b
c
MAX.
b
b
S
D
2.5
62
b
-
b
MIN.
500
2.0
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0507-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
DS
Document Number: 91057
TYP.
0.60
.
340
490
330
760
2.7
8.1
53
15
28
12
16
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
1140
250
500
4.5
3.0
4.3
8.5
2.5
1.6
S
25
17
10
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
nC
pF
ns
ns
Ω
V
V
S
A
V