IRF840STRRPBF Vishay, IRF840STRRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF840STRRPBF
• Description: N CHANNEL MOSFET, 500V, 8A, D2-PAK
• Manufacturer: Vishay

Specifications of IRF840STRRPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 91071
S-81432-Rev. A, 07-Jul-08
91071_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
8.0
6.0
4.0
2.0
0.0
91071_11
25
10
10
0.1
10
-3
-2
1
10
50
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
T
C
, Case Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
10
-4
100
Single Pulse
(Thermal Response)
125
10
-3
t
1
150
, Rectangular Pulse Duration (S)
10
-2
0.1
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
1
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
IRF840S, SiHF840S
DS
t
r
j
= P
P
10
D.U.T.
DM
DM
Vishay Siliconix
R
x Z
D
t
t
1
d(off)
1
thJC
/t
2
t
+ T
2
t
f
10
C
+
-
www.vishay.com
2
V
DD
5