IRFBC40ASTRRPBF Vishay, IRFBC40ASTRRPBF Datasheet - Page 6
IRFBC40ASTRRPBF
Manufacturer Part Number
IRFBC40ASTRRPBF
Description
N CHANNEL MOSFET, 600V, 6.2A D2-PAK
Manufacturer
Vishay
Datasheet
1.IRFBC40ASPBF.pdf
(8 pages)
Specifications of IRFBC40ASTRRPBF
Transistor Polarity
N Channel
Continuous Drain Current Id
6.2A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6.2 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRFBC40AS, SiHFBC40AS
Vishay Siliconix
www.vishay.com
6
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12d - Maximum Avalanche Energy vs. Drain Current
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S10-2433-Rev. B, 25-Oct-10
Document Number: 91113
D.U.T.
I
D
+
-
V
DS