IRFP27N60K Vishay, IRFP27N60K Datasheet - Page 4

• Manufacturer Part Number: IRFP27N60K
• Description: N CHANNEL MOSFET, 600V, 27A, TO-247
• Manufacturer: Vishay

Specifications of IRFP27N60K

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.22 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 27 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFP27N60K, SiHFP27N60K
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100000
10000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
10
12
10
1
7
5
2
0
0
I
D
=
28A
V DS , Drain-to-Source Voltage (V)
30
Q , Total Gate Charge (nC)
G
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
60
V
V
V
DS
DS
DS
Crss
= 480V
= 300V
= 120V
Ciss
Coss
f = 1 MHZ
90
100
This datasheet is subject to change without notice.
120
SHORTED
1000
150
1000
100
0.1
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
10
100
0.1
1
10
1
Fig. 8 - Maximum Safe Operating Area
0.2
10
Tc = 25°C
Tj = 150°C
Single Pulse
T = 150
J
V DS , Drain-toSource Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
0.5
°
C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
0.8
S11-0487-Rev. C, 21-Mar-11
T = 25
www.vishay.com/doc?91000
J
Document Number: 91219
100µsec
1msec
10msec
1000
°
C
1.1
V
GS
= 0 V
10000
1.4