IRFR5305 International Rectifier, IRFR5305 Datasheet - Page 2

• Manufacturer Part Number: IRFR5305
• Description: P CHANNEL MOSFET, -55V, 31A, D-PAK
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRFR5305

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -31A
• Drain Source Voltage Vds: -55V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.065Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 31A
• Power Dissipation: 110W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFR/U5305
ƒ
** Uses typical socket mount.
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics

‚
* When mounted on 1" square PCB (FR-4 or G-10 Material).
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
For recommended footprint and soldering techniques refer to application note #AN-994.
DSS
GSS
d(on)
r
d(off)
f
SM
rr
S
V
fs
D
S
2
(BR)DSS
GS(th)
iss
rss
DS(on)
g
gs
gd
oss
SD
rr
Repetitive rating; pulse width limited by
I
T
max. junction temperature. (See Fig. 11)
V
(BR)DSS
R
SD
J
DD
G
= 25 , I
= -25V, starting T
175°C
-16A, di/dt
/ T
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
AS
= -16A. (See Figure 12)
-280A/µs, V
J
= 25°C, L = 2.1mH
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
… This is applied for I-PAK, L
„
† Uses IRF5305 data and test conditions.
lead and center of die contact.
Pulse width 300µs; duty cycle 2%.
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
-55
8.0
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
-0.034 –––
1200 –––
–––
––– 0.065
–––
–––
–––
–––
–––
–––
–––
–––
–––
520
250
–––
–––
–––
170
4.5
14
66
39
63
7.5
71
-250
-100
–––
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
-110
-1.3
–––
110
250
-25
-31
63
13
29
V/°C
nH
µA
nA
nC
ns
pF
nC
ns
V
V
S
A
V
S
of D-PAK is measured between
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact …
V
V
ƒ = 1.0MHz, See Fig. 5 †
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = -100A/µs „†
integral reverse
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -16A
= -16A
= 25°C, I
= 25°C, I
= 1.6
= 6.8
= 0V, I
= -10V, I
= V
= -25V, I
= -55V, V
= -44V, V
= 20V
= -20V
= -44V
= -10V, See Fig. 6 and 13 „†
= -28V
= -25V
= 0V
GS
, I
D
See Fig. 10 „†
F
S
D
Conditions
= -250µA
D
D
Conditions
= -16A
= -16A, V
GS
GS
= -250µA
= -16A†
= -16A „
= 0V, T
= 0V
D
www.irf.com
= -1mA
GS
J
G
= 150°C
= 0V „
G
D
S
S
D