IRL640STRLPBF Vishay, IRL640STRLPBF Datasheet - Page 6

• Manufacturer Part Number: IRL640STRLPBF
• Description: N CHANNEL MOSFET, 200V, 17A SMD-220
• Manufacturer: Vishay

Specifications of IRL640STRLPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 5V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.18 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 17 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRL640S, SiHL640S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
5 V
p
Fig. 13a - Basic Gate Charge Waveform
V
to obtain
G
AS
R
Q
5 V
g
GS
V
DS
Charge
t
p
Q
Q
GD
G
I
AS
D.U.T.
0.01 W
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S10-2554-Rev. B, 08-Nov-10
Document Number: 91306
D.U.T.
V
I
DS
D
V
+
-
DD
V
DS