IRLR014TRLPBF Vishay, IRLR014TRLPBF Datasheet
IRLR014TRLPBF
Specifications of IRLR014TRLPBF
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IRLR014TRLPBF Summary of contents
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... ° 5 100 ° ° °C A for Ω 7.7 A (see fig. 12 ≤ 150 °C. J Vishay Siliconix Specified and device design, low on-resistance DPAK (TO-252) IPAK (TO-251) a IRLR014TRLPbF IRLU014PbF a SiHLR014TL-E3 SiHLU014-E3 a IRLR014TRL IRLU014 a SiHLR014TL SiHLU014 SYMBOL LIMIT ± 7 4 0.20 0.020 2.5 dV/dt 4 ...
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... IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91321 S09-0058-Rev. A, 02-Feb-09 IRLR014, IRLU014, SiHLR014, SiHLU014 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...
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... IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91321 S09-0058-Rev. A, 02-Feb-09 ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91321 S09-0058-Rev. A, 02-Feb-09 IRLR014, IRLU014, SiHLR014, SiHLU014 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off) f www.vishay.com 5 ...
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... IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current V DS ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91321. Document Number: 91321 S09-0058-Rev ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...