SI7447ADP-T1 Vishay, SI7447ADP-T1 Datasheet - Page 4

P CHANNEL MOSFET, -30V, 14A, SOIC

SI7447ADP-T1

Manufacturer Part Number
SI7447ADP-T1
Description
P CHANNEL MOSFET, -30V, 14A, SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI7447ADP-T1

Transistor Polarity
P Channel
Continuous Drain Current Id
-14A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
6.5mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-2V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7447ADP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7447DP
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.2
-0.4
0.6
0.4
0.2
0.0
-50
0.01
0.1
2
1
10
-25
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
- Temperature (_C)
25
10
I
- 3
D
50
= 250 mA
Limited by
r
DS(on)
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
100
0.1
10
10
1
0.1
- 2
125
Single Pulse
T
C
Square Wave Pulse Duration (sec)
150
V
= 25_C
DS
New Product
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
- 1
10
1
200
160
120
80
40
0
0.001
1 ms
10 ms
100 ms
1 s
10 s
dc
100
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
- T
t
A
Time (sec)
1
= P
t
2
DM
0.1
Z
thJA
thJA
100
S-21475—Rev. A, 26-Aug-02
t
t
1
2
(t)
Document Number: 71970
= 50_C/W
1
600
10

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