SI8409DB-T1-E1 Vishay, SI8409DB-T1-E1 Datasheet - Page 4

P CH MOSFET, -30V, 6.3A, MICRO FOOT

SI8409DB-T1-E1

Manufacturer Part Number
SI8409DB-T1-E1
Description
P CH MOSFET, -30V, 6.3A, MICRO FOOT
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI8409DB-T1-E1

Transistor Polarity
P Channel
Continuous Drain Current Id
-6.3A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
65mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.6A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Power - Max
1.47W
Mounting Type
Surface Mount
Package / Case
4-MICRO FOOT®CSP
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.046 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
6.4 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.6 A
Power Dissipation
1470 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI8409DB-T1-E1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI8409DB-T1-E1
Manufacturer:
Freescale
Quantity:
37
Part Number:
SI8409DB-T1-E1
Manufacturer:
VISHAY
Quantity:
8 000
Company:
Part Number:
SI8409DB-T1-E1
Quantity:
300
Si8409DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.6
0.5
0.4
0.3
0.2
0.1
0.0
- 50
0.01
0.1
2
1
10
I
- 25
D
- 4
= 250 µA
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
J
25
- Temperature (°C)
10
-3
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
1
0.1
10
-2
Limited R
* V
125
Limited
GS
I
D(on)
Single Pulse
T
A
> minimum V
Square Wave Pulse Duration (s)
= 25 °C
DS(on)
150
V
DS
Safe Operating Area
*
- Drain-to-Source Voltage (V)
1
10
-1
GS
BVDSS Limited
at which R
DS(on)
10
80
60
40
20
I
DM
0
0.001
1
Limited
is specified
Single Pulse Power, Junction-to-Ambient
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.01
100
0.1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
Time (s)
JM
- T
t
A
1
1
S-82118-Rev. B, 08-Sep-08
= P
t
Document Number: 73111
2
DM
Z
thJA
thJA
100
10
t
t
1
2
(t)
= 72 °C/W
100
6
0
0
600

Related parts for SI8409DB-T1-E1