SUD50N03-11-T1-E3 Vishay, SUD50N03-11-T1-E3 Datasheet

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... 0.017 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N03-11-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

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... SUD50N03-11 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

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... C oss C 400 rss Drain-to-Source Voltage (V) DS Capacitance Document Number: 71187 S-81225-Rev. D, 02-Jun- °C 125 ° 100 C iss SUD50N03-11 Vishay Siliconix 100 ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.04 0. 0.01 0. Drain Current (A) D On-Resistance vs. Drain Current 10 ...

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... SUD50N03-11 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS Case Temperature (°C) C Maximum Avalanche Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse ...

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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...