NTE5381 NTE ELECTRONICS, NTE5381 Datasheet
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NTE5381
Manufacturer Part Number
NTE5381
Description
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),400A I(T),TO-200AB
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5381.pdf
(2 pages)
Absolute Maximum Ratings:
Maximum Repetitive Peak Voltage, V
Maximum Non−Repetitive Peak Voltage, V
Repetitive Peak Off−State Current (T
Maximum Operating Temperature Range, T
Storage Temperature Range, T
Maximum Thermal Resistance, Junction−to−Heatsink, R
Maximum Thermal Resistance, Case−to−Heatsink, R
Mounting Torque (10%), F
Electrical Characteristics:
On−State Conduction
Max. Average On−State Current
Max. RMS On−State Current
Max. Peak, One Half Cycle,
Max. I
Max. Peak On−State Voltage
Threshold Voltage, Low Level
Threshold Voltage, High Level
at Heatsink Temperature
Non−Repetitive Surge
Current
2
DC Operation Single Side Cooled
DC Operation Double Side Cooled
DC Operation Single Side Cooled
DC Operation Double Side Cooled
t for Fusing
Parameter
for High Speed Switching, TO200AB
Silicon Controlled Rectifier (SCR)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
V
I
T(RMS)
I
I
V
T(TO)1
T(TO)2
T(AV)
TSM
stg
I
2
TM
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180 Conduction,
Half Sine Wave
DC @ +25C Heatsink Temperature, Double Side Cooled
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
(16.7% x x I
(I > x I
J
DRM
TM
= +125C), I
= 600V, T
, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RSM
NTE5381
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
T(AV)
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
No Voltage
Reapplied
100% V
Reapplied
No Voltage
Reapplied
100% V
Reapplied
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
), T
J
T(AV)
= +125C, t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
DRM
= +125C
< I < x I
Test Conditions
thCHS
RRM
RRM
, I
thJHS
RRM
p
Single Side Cooled, +85C
Double Side Cooled, +55C
Sinusoidal Half Wave,
Initial T
Sinusoidal Half Wave,
Initial T
= 10ms Sine Wave Pulse
T(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . .
), T
J
J
= +125C
= +125C
J
= +125C
−40 to +125C
−40 to +150C
4900N (500Kg)
Rating
4680
4900
3940
4120
2.07
1.55
1.61
120
330
610
110
100
77
71
0.033K/W
0.017K/W
0.17K/W
0.08K/W
1200V
1300V
40mA
KA
KA
KA
KA
Unit
A
A
A
A
A
A
A
V
V
V
2
2
2
2
s
s
s
s
Related parts for NTE5381
NTE5381 Summary of contents
Page 1
... Heatsink Temperature Max. RMS On−State Current Max. Peak, One Half Cycle, Non−Repetitive Surge Current 2 Max for Fusing Max. Peak On−State Voltage Threshold Voltage, Low Level Threshold Voltage, High Level NTE5381 , DRM RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RSM = +125C DRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): Parameter On−State Conduction (Cont’d) Forward Slope Resistance, Low Level Forward Slope Resistance, High Level Maximum Holding Current Typical Latching Current Switching Max. Non−Repetitive Rate of Rise of Turned−On Current Typical Delay Time Max. Turn−Off Time Blocking Maximum ...