NTE5461 NTE ELECTRONICS, NTE5461 Datasheet
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NTE5461
Manufacturer Part Number
NTE5461
Description
SILICON CONTROLLED RECTIFIER,50V V(DRM),10A I(T),TO-220
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5463.pdf
(2 pages)
Specifications of NTE5461
Rohs Compliant
YES
Description:
The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half−
wave AC control applications such as motor controls, heating controls, and power supplies; or wher-
ever half−wave silicon gate−controlled, solid−state devices are needed. These devices are supplied
in a TO220 type package.
Features;
D Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
D Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation,
D Blocking Voltage to 800 Volts
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage; Peak Repetitive Off−State Voltage (Note 1), V
Non−Repetitive Peak Reverse Voltage; Non−Repetitive Off−State Voltage, V
RMS Forward Current (All Conducting Angles, T
Peak Forward Surge Current (1 Cycle, Sine Wave, 60Hz, T
Circuit Fusing Considerations (T
Forward Peak gate Power (t ≤ 10μs), P
Forward Average Gate Power, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Note 1. V
and Durability
NTE5461
NTE5462
NTE5463
NTE5465
NTE5466
NTE5468
NTE5461
NTE5462
NTE5463
NTE5465
NTE5466
NTE5468
age. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias
applied to the gate concurrently with a negative potential on the anode.
DRM
and V
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RRM
for all types can be applied on a continuous DC basis without incurring dam-
Silicon Controlled Rectifier (SCR)
stg
J
G(AV)
NTE5461 thru NTE5468
= −65° to +100°C, t = 1 to 8.3ms), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10 Amp, TO220
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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C
= +75°C), I
C
= +80°C), I
T(RMS)
2
. . . . . . . . . . . . . . . . . . . . . .
t
. . . . . . . . . . . . . . . . . .
TSM
RSM
. . . . . . . . . . . . . .
RRM
, V
−40° to +100°C
−40° to +150°C
DSM
, V
DRM
500mW
2°C/W
40A
100V
200V
400V
600V
800V
125V
250V
500V
700V
900V
100A
16W
50V
75V
10A
2
s
Related parts for NTE5461
NTE5461 Summary of contents
Page 1
... Silicon Controlled Rectifier (SCR) Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half− wave AC control applications such as motor controls, heating controls, and power supplies; or wher- ever half−wave silicon gate−controlled, solid−state devices are needed. These devices are supplied in a TO220 type package. Features ...
Page 2
Parameter Peak Forward or Reverse Blocking Current Instantaneous On−State Voltage Gate Trigger Current (Continuous DC) Gate Trigger Voltage (Continuous DC) Holding Current Gate Controlled Turn−On Time Circuit Commutated Turn−Off Time Critical Rate−of−Rise of Off−State Voltage .147 (3.75) Dia Max .070 ...