NTE5481 NTE ELECTRONICS, NTE5481 Datasheet - Page 2
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NTE5481
Manufacturer Part Number
NTE5481
Description
SILICON CONTROLLED RECTIFIER,50V V(DRM),8A I(T),TO-208AB
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5480.pdf
(3 pages)
Note 3. For optimum operation, i.e. faster turn−on, lower switching losses, best di/dt capability, rec-
Note 4. Pulsed, 1ms max., Duty Cycle ≤ 1%.
Peak Forward or Reverse
Gate Trigger Current (Continuous DC)
Gate Trigger Voltage (Continuous DC)
Forward “ON” Voltage
Holding Current
Turn−On Time (t
Turn−Off Time
Forward Voltage Application Rate
Blocking Current
(Exponential)
ommended I
Parameter
d
+ t
r
)
GT
= 200mA minimum.
C
Symbol
I
dv/dt
I
DRM
V
v
RRM
I
t
t
GT
I
TM
on
off
GT
H
,
Rated V
Gate Open
V
Note 3
V
I
V
I
I
dv/dt = 30V/μs
Gate Open, T
V
TM
G
F
D
D
D
D
= 5A, I
= 20mA, I
= 7V, R
= 7V, R
= 7V, Gate Open
= Rated V
= 15.7A, Note 4
DRM
R
L
L
= 5A,
Test Conditions
F
= 100Ω,
= 100Ω
or V
DRM
= 5A, V
J
= +100°C,
RRM
,
D
T
T
T
T
T
T
= Rated V
T
V
J
J
J
C
C
C
J
D
= +100°C
= +25°C
= +100°C
= +100°C,
= −40°C
= −40°C
= −40°C
= Rated V
DRM
DRM
Min
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
0.75
Typ Max Unit
1.4
10
10
15
25
50
−
−
−
−
−
−
1
1.5
2.5
2.0
10
30
60
30
60
2
−
−
−
−
−
V/μs
mA
mA
mA
mA
mA
μA
μs
μs
μs
V
V
V
V