NTE5555 NTE ELECTRONICS, NTE5555 Datasheet - Page 2

• Manufacturer Part Number: NTE5555
• Description: SILICON CONTROLLED RECTIFIER,600V V(DRM),290A I(T),TO-200var42
• Manufacturer: NTE ELECTRONICS

Absolute Maximum Ratings (Cont’d): (T
Peak On–State Voltage (I
Forward Conduction Threshold Voltage, V
Forward Conduction Slope Resistance, r
Repetitive Peak Off–State Current (At V
Repetitive Peak Reverse Current (At V
Maximum Gate Current (V
Maximum Gate Voltage (V
Maximum Holding Current (V
Maximum Gate Voltage Which Will Not Trigger Any Device, V
(15.0)
(42.0)
1.650
.590
Anode
Dia
(0.3)
.012
TM
A
A
= 6V, I
= 6V, I
= 1550A), V
A
= 6V, I
A
A
= 1A, T
= 1A, T
A
Dia (2 Holes)
.140 x .075
RRM
(3.5 x 1.8)
= 1A, T
DRM
TM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
O
), I
(25.1)
(25.1)
J
.990
.990
J
J
), I
Dia
Dia
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +125 C unless otherwise specified)
= +25 C), I
= +25 C), V
RRM
DRM
J
.190 (4.8)
= +25 C), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GT
GT
H
1.102 (28.0)
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
GD
. . . . . . . . . . . . . . . . . . . . . . .
Cathode
Gate Terminal
25
0.483m
150mA
500mA
1.78V
1.03V
40mA
40mA
0.25V
3V