NTE5588 NTE ELECTRONICS, NTE5588 Datasheet

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NTE5588

Manufacturer Part Number
NTE5588
Description
SILICON CONTROLLED RECTIFIER,1.6kV V(DRM),226A I(T),TO-209var3/4
Manufacturer
NTE ELECTRONICS
Datasheet
Electrical Characteristics: (Maximum values @ T
Repetitive Peak Voltages, V
Non−Repetitive Peak Off−State Voltage, V
Non−Repetitive Peak Reverse Blocking Voltage, V
Average On−State Current (Half Sine Wave, T
RMS On−State Current, I
Continuous On−State Current, I
Peak One−Cycle, Non−Repetitive Surge Current (10ms Duration), I
Maximum I
Peak Forward Gate Current (Anode Positive with Respect to Cathode), I
Peak Forward Gate Voltage (Anode Positive with Respect to Cathode), V
Peak Reverse Gate Voltage, V
Average Gate Power, P
Peak Gate Power (100μs Pulse Width), P
Rate of Rise of Off−State Voltage (To 80% V
Rate of Rise of ON−State Current, di/dt
Peak On−State Voltage (I
Forward Conduction Threshold Voltage, V
Forward Conduction Slope Resistance, r
Repetitive Peak Off−State Current (At V
Repetitive Peak Reverse Current (At V
Maximum Gate Current Required to Fire All Devices (V
Maximum Gate Voltage Required to Fire All Devices (V
Maximum Holding (V
Maximum Gate Voltage which will not Trigger any Device, V
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case (V
Thermal Resistance, Case−to−Heat Sink, R
60% V
V
10ms Duration
10ms Duration
(Gate Drive 20V, 20Ω, with t
DC and 180° Sine wave
120° Rectangular wave
R
≤ 10V
Repetitive
Non−Repetitive
2
t for Fusing (V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
reapplied
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 6V, I
G
Silicon Controlled Rectifier (SCR)
T(RMS)
TM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
≤ 10V), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 710A), V
A
RGM
= 2A, T
stg
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1600V, 360 Amps, TO93
& V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
r
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
≤ 1μs, Anode Voltage ≤ 80% V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
2
t
J
RRM
TM
DRM
= +25°C), I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
O
DSM
F
NTE5588
), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thC−HS
), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= Max Rating), R
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
C
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +85°C), I
, Gate Open), dv/dt
RSM
H
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +125°C unless otherwise specified)
A
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 6V, I
= 6V, I
T(AV)
GD
tnJC
A
A
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
= 2A, T
= 2A, T
DRM
TSM
. . . . . . . . . . . . . . . . . .
)
FGM
J
J
FGM
= +25°C), I
= +25°C), V
. . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
−40° to +125°C
−40° to +150°C
131,000A
GT
GT
97350A
. .
0.12°C/W
0.14°C/W
0.04°C/W
1000A/μs
. . . . .
200V/μs
500A/μs
0.99mΩ
150mA
600mA
1600V
1600V
1700V
4650A
5120A
100W
1.62V
0.92V
20mA
20mA
0.25V
226A
355A
355A
2
2
20A
18V
sec
sec
2W
5V
3V

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NTE5588 Summary of contents

Page 1

... Maximum Gate Voltage which will not Trigger any Device, V Operating Temperature Range, T Storage Temperature Range, T Thermal Resistance, Junction−to−Case (V DC and 180° Sine wave 120° Rectangular wave Thermal Resistance, Case−to−Heat Sink, R NTE5588 1600V, 360 Amps, TO93 = +125°C unless otherwise specified) J & DRM RRM ...

Page 2

For No. 6 Screw Cathode Cath- ode (Red) 1.212 (30.8) Dia Max .156 (3.96) Max 1.077 (27.35) Max 1.443 (36.68) Max (Across Corners) Ç Ç Ç Ç Ç Ç 1.031 (26.18) Dia (Ceramic) .643 (16.35) For No. 6 Screw .350 ...

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