LM3046M National Semiconductor, LM3046M Datasheet - Page 2
LM3046M
Manufacturer Part Number
LM3046M
Description
TRANSISTOR ARRAY, NPN, 5, 15V, SOIC
Manufacturer
National Semiconductor
Datasheet
1.LM3046M.pdf
(7 pages)
Specifications of LM3046M
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
15V
Transition Frequency Typ Ft
550MHz
Power Dissipation Pd
750mW
Dc Collector Current
50mA
Dc Current Gain Hfe
100
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LM3046M
Manufacturer:
NS/国半
Quantity:
20 000
Company:
Part Number:
LM3046M/NOPB
Manufacturer:
FSC
Quantity:
12 000
Company:
Part Number:
LM3046MNOPB
Manufacturer:
ST
Quantity:
2 986
Part Number:
LM3046MX
Manufacturer:
NS/国半
Quantity:
20 000
Company:
Part Number:
LM3046MX/NOPB
Manufacturer:
TI
Quantity:
3 000
www.national.com
Collector to Base Breakdown Voltage (V
Collector to Emitter Breakdown Voltage (V
Collector to Substrate Breakdown
Voltage (V
Emitter to Base Breakdown Voltage (V
Collector Cutoff Current (I
Collector Cutoff Current (I
Static Forward Current Transfer
Ratio (Static Beta) (h
Input Offset Current for Matched
Pair Q
Base to Emitter Voltage (V
Magnitude of Input Offset Voltage for
Differential Pair |V
Magnitude of Input Offset Voltage for Isolated
Transistors |V
|V
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
See AN-450 “Surface Mounting Methods and Their Effect on
Product Reliability” for other methods of soldering surface
mount devices.
Electrical Characteristics
(T
BE5
A
= 25˚C unless otherwise specified)
− V
1
and Q
BE3
(BR)CIO
|
BE3
2
|I
)
O1
Power Dissipation:
Collector to Emitter Voltage, V
Collector to Base Voltage, V
Collector to Substrate Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Operating Temperature Range
Storage Temperature Range
Soldering Information
− V
BE1
T
T
T
T
T
Dual-In-Line Package Soldering (10 Sec.)
Small Outline Package
Vapor Phase (60 Seconds)
Infrared (15 Seconds)
− I
FE
A
A
A
A
A
BE4
Parameter
− V
= 25˚C
= 25˚C to 55˚C
= 25˚C to 75˚C
IO2
>
>
)
|, |V
55˚C
75˚C
CBO
CEO
BE2
|
BE
BE4
)
|
)
)
− V
BE5
C
(BR)EBO
|,
(BR)CBO
(BR)CEO
EBO
CBO
)
CEO
)
(Note 1)
)
CIO
(Note 2)
I
I
I
I
V
V
V
V
V
V
V
C
C
C
E
CB
CE
CE
CE
CE
CE
CE
10 µA, I
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 10V, I
= 10V, I
= 3V
= 3V, I
= 3V
= 3V, I
= 3V, I
2
Distributors for availability and specifications. (T
25˚C)
C
C
C
C
B
Conditions
= 0
E
CI
E
B
= 1 mA
= 1 mA
= 1 mA
= 0
= 0
= 0
= 0
= 0
Transistor
260˚C
215˚C
220˚C
Each
I
I
300
300
I
I
I
E
E
−40˚C to +85˚C
−65˚C to +85˚C
C
C
C
Derate at 6.67
15
20
20
50
= 1 mA
= 10 mA
5
= 10 mA
= 1 mA
= 10 µA
LM3046
Package
Total
750
750
Min
20
15
20
40
5
mW/˚C
mW/˚C
Units
mW
mW
mW
Typ
mA
0.002
0.715
0.800
Limits
0.45
0.45
V
V
V
V
100
100
0.3
60
24
60
54
7
Max
0.5
40
2
5
5
Units
A
mV
mV
nA
µA
µA
V
V
V
V
V
=