BC635 MULTICOMP, BC635 Datasheet - Page 2

• Manufacturer Part Number: BC635
• Description: BIPOLAR TRANSISTOR, NPN, 45V, TO-92
• Manufacturer: MULTICOMP

Specifications of BC635

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 45V
• Transition Frequency Typ Ft: 200MHz
• Power Dissipation Pd: 800mW
• Dc Collector Current: 1A
• Dc Current Gain Hfe: 250
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics (T
Absolute Maximum Ratings (T
*Pulse Test : Pulse Width = 300µs, Duty Cycle = 2%.
BC635
Medium Power Bipolar Transistors
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut off Current
Base Emitter On Voltage
Collector Emitter Saturation Voltage
DC Current Gain
Dynamic Characteristics
Transistors Frequency
Output Capacitance
Input Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Continuous
Power Dissipation at T
Derate Above 25°C
Power Dissipation at T
Derate Above 25°C
Operating and Storage Junction Temperature Range
Thermal Resistance
From Junction to Case
From Junction to Ambient
Description
Description
a
C
= 25°C
= 25°C
a
= 25°C unless otherwise specified)
a
= 25°C)
V
V
Symbol
V
CE (sat)
V
BE (on)
V
I
h
C
CEO
CBO
C
CBO
EBO
FE
f
T
ob
ib
*
*
*
*
Page <2>
I
C
= 50mA, V
V
Symbol
BE
T
R
R
I
V
V
V
I
I
I
C
j
th (j-a)
C
C
C
, T
th (j-c)
V
P
I
CBO
CEO
EBO
= 0.5V, I
I
C
C
I
= 500mA, I
CB
I
D
V
V
= 500mA, V
= 150mA, V
= 500mA, V
C
I
C
Test Condition
E
stg
= 5mA, V
CB
CB
= 100µA, I
= 10mA, I
= 10µA, I
= 10V, f = 1MHz
T
Group-10
Group-16
a
= 30V, I
= 30V, I
CE
= 125°C
C
= 2V, f = 100MHz
= 0, f = 1MHz
B
CE
C
CE
CE
CE
B
E
E
= 50mA
E
= 0
= 2V
= 0
= 0
= 0
= 0
= 2V
= 2V
= 2V
-55 to +150
BC635
2.75
800
156
5.0
1.0
6.4
45
22
45
200 (Typical)
7.0 (Typical)
50 (Typical)
100 - 250
TBC635
40 - 250
63 - 160
<100
>5.0
<1.0
<0.5
>45
<10
>25
>25
13/05/08 V1.1
mW/°C
mW/°C
°C/W
Unit
mW
°C
W
V
A
Units
MHz
nA
µA
pF
V
V
-