FZT951 Diodes Inc, FZT951 Datasheet - Page 4

• Manufacturer Part Number: FZT951
• Description: BIPOLAR TRANSISTOR, PNP, -60V
• Manufacturer: Diodes Inc

Specifications of FZT951

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 60V
• Transition Frequency Typ Ft: 120MHz
• Power Dissipation Pd: 3W
• Dc Collector Current: -5A
• Dc Current Gain Hfe: 200
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Transition Frequency
Output Capacitance
Switching Times
FZT953
SYMBOL
V
V
V
V
I
I
R
I
V
V
V
h
f
C
t
t
CBO
CER
EBO
T
on
off
FE
(BR)CBO
(BR)CER
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo

1 k

MIN.
-140
-140
-100
-6
100
100
50
30
3 - 282
amb


= 25°C unless otherwise stated)
TYP.
-170
-170
-120
-8
-20
-90
-160
-300
-1010
-925
200
200
90
50
15
125
65
110
460
s . Duty cycle
MAX.
-50
-1
-50
-1
-10
-50
-115
-220
-420
-1170
-1160
300

2 %
UNIT
V
V
V
V
nA


nA


nA
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
A
A
CONDITIONS.
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
B2
CB
CB
CB
CB
EB
CB
=-100
=-10mA*
=-100
=-100mA, I
=-1A, I
=-2A, I
=-4A, I
=-4A, I
=-10mA, V
=-1A, V
=-3A, V
=-4A, V
=-10A, V
=-100mA, V
=-2A, I
=-1
=-4A, V
=200mA, V
=-6V
=-100V
=-100V, T
=-100V
=-100V, T
=-10V, f=1MHz


A , RB




B
B
B
B
B1
A
A
CE
CE
CE
=-100mA*
=-200mA*
=-400mA*
=-400mA*
CE
=-200mA
CE
=-1V*
=-1V*
=-1V*
=-1V*
 
=-1V*
CE
B
amb
amb
1 k
=-10mA*
CE
CC
=-1V*
=-10V
=-10V

=100°C
=100°C