MJ11032 MULTICOMP, MJ11032 Datasheet

BIPOLAR TRANSISTOR, NPN, 120V, TO-3

MJ11032

Manufacturer Part Number
MJ11032
Description
BIPOLAR TRANSISTOR, NPN, 120V, TO-3
Manufacturer
MULTICOMP
Datasheet

Specifications of MJ11032

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
120V
Power Dissipation Pd
300W
Dc Collector Current
50A
Dc Current Gain Hfe
1000
Operating Temperature Range
-65°C To +200°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJ11032
Manufacturer:
M
Quantity:
1
Part Number:
MJ11032
Manufacturer:
MOT
Quantity:
20
Part Number:
MJ11032
Manufacturer:
SGS
Quantity:
20 000
Company:
Part Number:
MJ11032
Quantity:
1 000
Company:
Part Number:
MJ11032
Quantity:
1 000
Part Number:
MJ11032G
Quantity:
300
Part Number:
MJ11032G
Manufacturer:
ON/安森美
Quantity:
20 000
Maximum Ratings
MJ11032, 11033
Darlington Power Transistors
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total Power Dissipation at T
Derate above 25°C
Operating and Storage Junction Temperature Range
Pin 1. Base
2. Emitter
Collector(Case)
-Peak
Characteristic
C
= 25°C
Dimensions
C
D
G
H
A
B
E
F
K
J
I
Complementary Silicon Power Darlington Transistors are designed for use as
output devices in complementary general purpose amplifier applications.
Features:
• • High Gain Darlington performance.
• • High DC Current Gain: h
• • Monolithic construction with built-in Base-Emitter Shunt Resistor.
Minimum
38.75
19.28
11.18
25.20
29.90
16.64
10.67
7.96
0.92
1.38
3.88
Dimensions : Millimetres
Page 1
T
Symbol
J
V
V
V
, T
I
P
CEO
CBO
EBO
CM
I
I
C
B
Maximum
D
STG
39.96
22.23
12.19
26.67
30.40
17.30
11.18
9.28
1.09
1.62
4.36
h
-65 to +200
FE
FE
Rating
= 1000 (Minimum) at I
1.71
= 400 (Minimum) at I
120
100
300
5.0
2.0
50
MJ11032
NPN
Darlington Transistors
Complementary
Silicon Power
W/°C
Unit
50 Ampere
300 Watts
°C
W
120 Volts
V
A
C
TO-3
C
= 50A.
= 25A,
MJ11033
PNP
31/05/05 V1.0

Related parts for MJ11032

MJ11032 Summary of contents

Page 1

... MJ11032, 11033 Darlington Power Transistors Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation 25°C C Derate above 25°C Operating and Storage Junction Temperature Range Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications ...

Page 2

... MJ11032, 11033 Darlington Power Transistors Thermal Characteristics Characteristic Thermal Resistance Junction to Case Figure - 1 Power Derating T , Temperature (°C) C Electrical Characteristics (T Characteristic OFF Characteristics Collector-Emitter Sustaining Voltage ( 100mA Collector Cut off Current (V = 50V Collector-Emitter Leakage Current (V = 120V 1kΩ 120V 1kΩ 125° Emitter Cut off Current ( ...

Page 3

... MJ11032, 11033 Darlington Power Transistors Electrical Characteristics (T Characteristic Dynamic Characterisitics Small-Signal Current Gain (I = 10A 3.0V 1.0MHz (1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%. = h  • test NPN MJ11032 DC Current Gain I , Collector Current (AMP 25°C unless otherwise noted) C Symbol ...

Page 4

... MJ11032, 11033 Darlington Power Transistors “ON” Voltages I , Collector Current (AMP) C Active-Region Safe Operating Area (SOA Collector Emitter Voltage (Volts) CE Specifications I V C(av) CEO maximum maximum (A) (V) 50 120 There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown safe operating area curves indicate I that must be observed for reliable operation i ...

Page 5

... MJ11032, 11033 Darlington Power Transistors Notes: International Sales Offices: AUSTRALIA – Farnell InOne Tel No 9645 8888 Fax No 9644 7898 AUSTRIA – Farnell InOne Tel No 662 2180 680 Fax No 662 2180 670 BELGIUM – Farnell InOne Tel No 475 2810 Fax No 227 3648 BRAZIL – ...

Related keywords