MPSA06 MULTICOMP, MPSA06 Datasheet - Page 2

• Manufacturer Part Number: MPSA06
• Description: BIPOLAR TRANSISTOR, NPN, 80V, TO-92
• Manufacturer: MULTICOMP

Specifications of MPSA06

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 80V
• Transition Frequency Typ Ft: 100MHz
• Power Dissipation Pd: 625mW
• Dc Collector Current: 500mA
• Dc Current Gain Hfe: 100
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

(1) R
Electrical Characteristics (T
*Pulse Test : pulse width ≤300µs, duty cycle ≤2%.
** f
Absolute Maximum Ratings (T
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at T
Derate Above 25°C
Power Dissipation at T
Derate Above 25°C
Operating and Storage Junction Temperature Range
Thermal Resistance
Junction to Ambient
Junction to Case
Collector Emitter Voltage
Emitter-Base Voltage
Collector-Cut off Current
Collector-Cut off Current
Collector-Emitter (sat) Voltage
Base-Emitter (on) Voltage
DC Current Gain
Dynamic Characteristics
Transition Frequency
MPSA06
NPN Silicon Transistor
T
is defined as the frequency at which |h
th (j-a)
is measured with the device soldered into a typical printed circuit board.
Parameters
Parameters
a
c
= 25°C
= 25°C
a
Symbol
V
V
= 25°C unless otherwise specified)
V
V
CE (sat)
I
I
BE (on)
a
fe
CEO*
CBO
CEO
EBO
h
f
T **
| extrapolates to unity.
FE
= 25°C unless otherwise specified)
I
I
C
C
V
V
I
C
I
= 100mA, I
CE
V
V
= 100mA, V
E
CE
I
Test Condition
C
CB
CE
= 10mA, V
= 100µA, I
Page 2
= 1V, I
= 1mA, I
= 1V, I
f = 100MHz
= 80V, I
= 60V, I
R
Symbol
T
th (j-a) (1)
V
V
V
R
C
j,
P
C
CEO
CBO
EBO
I
th (j-c)
B
T
C
= 100mA
D
B
CE
= 10mA
CE
E
B
stg
C
= 10mA
= 0
= 0
= 0
= 0
= 1V
= 2V
Minimum
-55 to +150
100
100
4.0
80
100
-
-
-
-
Value
83.3
500
625
200
5.0
1.5
80
12
4
Maximum
0.25
0.1
1.2
-
-
-
-
13/05/08 V1.1
mW/°C
mW/°C
°C/mW
Units
mW
mA
°C
W
V
Units
MHz
µA
V
V
-