NTE392 NTE ELECTRONICS, NTE392 Datasheet - Page 2

BIPOLAR TRANSISTOR, NPN, 100V, TO-218

NTE392

Manufacturer Part Number
NTE392
Description
BIPOLAR TRANSISTOR, NPN, 100V, TO-218
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE392

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Transition Frequency Typ Ft
3MHz
Power Dissipation Pd
125W
Dc Collector Current
25A
Dc Current Gain Hfe
75
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%.
Note 3. f
OFF Characteristics
Collector−Emitter Sustaining Voltage V
Collector−Emitter Cutoff Current
Emitter−Base Cutoff Current
ON Characteristics (Note 2)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter ON Voltage
Dynamic Characteristics
Small−Signal Current Gain
Current−Gain Bandwidth Product
T
= |h
Parameter
fe
|  f
test
B
C
(15.24)
.600
C
.144 (3.65)
C
Dia. Max
= +25°C unless otherwise specified)
Symbol
V
V
CEO(sus)
I
I
CE(sat)
I
BE(on)
h
CEO
CES
EBO
h
E
f
FE
T
fe
.216 (5.45)
.055 (1.4)
I
V
V
V
I
I
I
I
I
I
I
I
f = 1MHz, Note 3
(13.97)
C
C
C
C
C
C
C
C
C
CE
CE
EB
.550
= 30mA, I
= 1.5A, V
= 15A, V
= 15A, I
= 25A, I
= 15A, V
= 25A, V
= 1A, V
= 1A, V
.173 (4.4)
= 5V, I
= 60V, I
= 100V, V
.060 (1.52)
Test Conditions
(10.92)
(12.7)
CE
CE
.430
.500
B
B
Min
C
CE
CE
CE
CE
B
B
= 1.5A
= 5A
= 0
= 10V, f = 1kHz
= 10V,
= 0, Note 2
= 0
EB
= 4V
= 4V
= 4V
= 4V
= 0
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners
Min
100
25
15
25
3
Typ
Max Unit
0.7
1.8
2.0
4.0
75
1
1
4
MHz
mA
mA
mA
V
V
V
V
V

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