TIP29A MULTICOMP, TIP29A Datasheet - Page 3

• Manufacturer Part Number: TIP29A
• Description: BIPOLAR TRANSISTOR, NPN, 60V TO-220
• Manufacturer: MULTICOMP

Specifications of TIP29A

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 60V
• Transition Frequency Typ Ft: 3MHz
• Power Dissipation Pd: 30W
• Dc Collector Current: 1A
• Dc Current Gain Hfe: 75
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics (T
(1) Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2.0%.
(2) f
ON CHARACTERISTICS (1)
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(I
Collector Cut off Current
(V
(V
Collector Cut off Current
(V
(V
Emitter Cut off Current
(V
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product (2)
(I
Small Signal Current Gain
(I
DC Current Gain
(I
(I
Collector-Emitter Saturation Voltage
(I
Base-Emitter On Voltage
(I
TIP29, 30
High Power Bipolar Transistor
C
C
C
C
C
C
C
CE
CE
CE
CE
EB
T =
= 30mA, I
= 200mA, V
= 200mA, V
= 0.2A, V
= 1.0A, V
= 1.0A, I
= 1.0A, V
= 30V, I
= 60V, I
= 60V, V
= 100V, V
= 5.0V, I
h
FE
• f
B
CE
CE
CE
B
B
B
C
TEST.
EB
= 125mA)
= 0)
= 0)
= 0)
EB
CE
CE
Characteristic
= 0)
= 4.0V)
= 4.0V)
= 4.0V)
= 0)
= 0) TIP29C, TIP30C
= 10V, f = 1MHz)
= 10V, f = 1kHz)
TIP29A, TIP30A
TIP29A, TIP30A
TIP29C, TIP30C
TIP29A, TIP30A
TIP29C, TIP30C
C
= 25°C unless otherwise noted)
V
Symbol
V
V
CEO(sus)
I
I
I
CE(sat)
BE(on)
CEO
h
CES
EBO
h
f
FE
T
fe
Page 3
Minimum
100
3.0
60
40
15
20
-
-
-
-
-
Maximum
0.3
0.2
1.0
0.7
1.3
75
-
-
-
-
MHz
Unit
mA
V
V
-
-
31/05/05 V1.0