TIP32A MULTICOMP, TIP32A Datasheet - Page 3

• Manufacturer Part Number: TIP32A
• Description: BIPOLAR TRANSISTOR, PNP -60V TO-220
• Manufacturer: MULTICOMP

Specifications of TIP32A

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -60V
• Transition Frequency Typ Ft: 3MHz
• Power Dissipation Pd: 40W
• Dc Collector Current: -3A
• Dc Current Gain Hfe: 25
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics (T
OFF Characteristics
ON Characteristics (1)
Dynamic Characteristics
(1) Pulse Test: Pulse width ≤300µs, Duty Cycle ≤2.0%
(2) f
TIP31, TIP32
High Power Bipolar Transistor
Current Gain-Bandwidth Product (2)
Small Signal Current Gain
DC Current Gain
(I
(I
Collector-Emitter Saturation Voltage
(I
Base-Emitter On Voltage
(I
(I
(I
Collector-Emitter Sustaining Voltage (1)
(I
Collector Cut off Current
(V
(V
Collector Cut off Current
(V
(V
Emitter Cut off Current
(V
T =
C
C
C
C
C
C
C
CE
CE
CE
CE
EB
= 1.0A, V
= 3.0A, V
= 3.0A, I
= 3.0A, V
= 500mA, V
= 500mA, V
= 30mA, I
h
= 30V, I
= 60V, I
= 60V, V
= 100V, V
= 5.0V, I
FE
• f
TEST
B
CE
CE
CE
B
B
B
= 375mA)
C
EB
CE
CE
= 0)
= 0)
= 0)
EB
= 0)
= 4.0V)
= 4.0V)
= 4.0V)
= 0)
= 10V, f
= 10V, f = 1kHz)
= 0)
Characteristic
TEST
= 1MHz)
TIP31A, TIP32A
TIP31C, TIP32C
TIP31A, TIP32A
TIP31C, TIP32C
TIP31A, TIP32A
TIP31C, TIP32C
C
= 25°C unless otherwise noted)
Page 3
V
Symbol
V
V
CEO(sus)
I
I
CE(sat)
I
BE(on)
h
h
CEO
CES
EBO
f
FE
FE
T
Minimum
100
3.0
60
25
10
20
-
-
-
-
-
Maximum
0.3
0.2
1.0
1.2
1.8
50
-
-
-
-
31/05/05 V1.0
MHz
Unit
mA
V
V
-
-