2N5400 NTE ELECTRONICS, 2N5400 Datasheet

2N5400

Manufacturer Part Number

2N5400

Description

T-PNP SI-HIV GEN PUR AMP

Manufacturer

NTE ELECTRONICS

Datasheet

1.2N5400.pdf (2 pages)

Specifications of 2N5400

Rohs Compliant

YES

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1997. 5. 13

GENERAL PURPOSE APPLICATION.

HIGH VOLTAGE APPLICATION.

FEATURES

MAXIMUM RATING (Ta=25 )

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

High Collector Breakdwon Voltage

Low Leakage Current.

Low Saturation Voltage

Low Noise : NF=8dB (Max.)

: V

: I

: V

CBO

CE(sat)

CHARACTERISTIC

(Ta=25 )

(Tc=25 )

=-100nA(Max.) @V

=-130V, V

=-0.5V(Max.) @I

CEO

=-120V

Revision No : 0

SEMICONDUCTOR

=-50mA, I

=-100V

TECHNICAL DATA

SYMBOL

=-5mA

CBO

CEO

EBO

stg

-55 150

RATING

-130

-120

-600

-100

625

150

1.5

-5

UNIT

EPITAXIAL PLANAR PNP TRANSISTOR

2N5400

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

DIM

MILLIMETERS

14.00 0.50

4.70 MAX

4.80 MAX

3.70 MAX

0.55 MAX

0.45 MAX

0.45

1.00

1.27

0.85

0.45

2.30

1.00

+ _

1/2

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2N5400 Summary of contents

Page 1

... TECHNICAL DATA =-5mA B SYMBOL RATING UNIT V -130 V CBO V -120 V CEO EBO I -600 -100 625 1 150 j T -55 150 stg 2N5400 EPITAXIAL PLANAR PNP TRANSISTOR DIM MILLIMETERS A 4.70 MAX 4.80 MAX G C 3.70 MAX 14.00 0.50 K 0.55 MAX 0.45 MAX EMITTER 2. BASE 3. COLLECTOR TO-92 ...

Page 2

... Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Small-Signal Current Gain Noise Figure * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 1997 Revision 2N5400 SYMBOL TEST CONDITION V =-100V CBO V =-100V, I =0, Ta=100 CB ...

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