BC847C MULTICOMP, BC847C Datasheet - Page 2

• Manufacturer Part Number: BC847C
• Description: TRANSISTOR, NPN, SOT-23
• Manufacturer: MULTICOMP

Specifications of BC847C

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 45V
• Power Dissipation Pd: 250mW
• Dc Collector Current: 100mA
• Transistor Case Style: SOT-23
• No. Of Pins: 3
• Collector Emitter Voltage Vces: 200mV
• Dc Current Gain Hfe: 125
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Ratings (at T
BC847C
General Purpose SMD NPN Transistors
Small-Signal Current Gain
I
Transition Frequency at f = 100MHz
I
Noise Figure at R
I
f = 1kHz; B = 200Hz
Collector-Base Voltage (Open Emitter)
Collector-Emitter Voltage (V
Collector-Emitter Voltage (Open Base)
Emitter-Base Voltage (Open Collector)
Collector Current (DC)
Collector Current (Peak Value)
Emitter Current (Peak Value)
Base Current (Peak Value)
Total Power Dissipation upto T
Storage Temperature
Junction Temperature
Thermal Resistance
From junction to ambient
Characteristics (T
Collector Cut off Current
I
I
Base-Emitter Voltage
I
I
Saturation Voltage
I
I
C
C
C
E
E
C
C
C
C
= 0; V
= 0; V
= 2mA; V
= 10mA; V
= 200mA; V
= 2mA; V
= 10mA; V
= 10mA; I
= 100mA; I
CB
CB
= 30V
= 30V; T
CE
CE
B
CE
CE
B
= 0.5mA
CE
= 5V; f = 1kHz
= 5V
= 5mA
A
= 5V
= 5V
S
= 5V
= 25°C unless otherwise specified)
= 2kW
j
= 150°C
j
= 25°C unless otherwise specified)
BE
amb
= 0)
: 25°C
Symbol
Symbol
V
V
V
V
R
V
V
Page 2
V
V
CE (sat)
CE (sat)
BE (sat)
BE (sat)
I
-I
V
V
T
I
I
P
th (j-a)
CBO
h
CBO
CES
CEO
EBO
CM
I
BM
T
f
F
EM
stg
C
BE
BE
T
tot
fe
j
Maximum
Maximum
Minimum
Typical
Typical
Typical
Typical
Typical
Typical
=
<
<
<
<
-
-55 to +150
580 to 700
BC847C
BC847C
>100
125
100
200
250
150
500
660
770
250
700
200
600
900
50
45
15
90
2
6
5
09/05/08 V1.1
Units
Units
MHz
K/W
mW
mA
mV
dB
nA
µA
°C
V
-