BD437 MULTICOMP, BD437 Datasheet

BIPOLAR TRANSISTOR, NPN, 45V

BD437

Manufacturer Part Number
BD437
Description
BIPOLAR TRANSISTOR, NPN, 45V
Manufacturer
MULTICOMP
Datasheet

Specifications of BD437

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
45V
Transition Frequency Typ Ft
3MHz
Power Dissipation Pd
36W
No. Of Pins
3
No. Of Transistors
1
Junction Temperature, Tj Max
150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2001 Fairchild Semiconductor Corporation
Medium Power Linear and Switching
Applications
• Complement to BD434, BD436 and BD438 respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
V
V
I
I
I
V
V
P
T
T
C
CP
B
CEO
EBO
J
STG
CBO
CES
C
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
C
BD433/435/437
T
=25 C)
: BD433
: BD435
: BD437
: BD433
: BD435
: BD437
: BD433
: BD435
: BD437
Parameter
C
=25 C unless otherwise noted
1
1. Emitter
- 65 ~ 150
Value
150
2.Collector
36
22
32
45
22
32
45
22
32
45
5
4
7
1
TO-126
3.Base
Rev. A1, June 2001
Units
W
V
V
V
V
V
V
V
V
V
V
A
A
A
C
C

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BD437 Summary of contents

Page 1

... C I *Collector Current (Pulse Base Current B P Collector Dissipation ( Junction Temperature J T Storage Temperature STG ©2001 Fairchild Semiconductor Corporation BD433/435/437 T =25 C unless otherwise noted C Parameter : BD433 : BD435 : BD437 : BD433 : BD435 : BD437 : BD433 : BD435 : BD437 = TO-126 1 1. Emitter 2.Collector 3.Base Value Units ...

Page 2

... BD435 V = 32V BD437 V = 45V BD433 V = 22V BD435 V = 32V BD437 V = 45V 5V BD433/435 BD437 : ALL DEVICE BD433/435 BD437 : BD433 BD435 : BD437 : BD433 BD435 : BD437 Min. Typ. Max 100 100 100 100 100 100 10mA 40 130 30 130 = 500mA ...

Page 3

... V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage 10 I MAX. (Pulsed Max. (Continuous BD433 BD435 BD437 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0.1 0.01 10 100 0.1 Figure 2. Collector-Emitter Saturation Voltage 1000 V ...

Page 4

Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...

Page 5

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ DOME™ ...

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