BD910 STMicroelectronics, BD910 Datasheet - Page 2

• Manufacturer Part Number: BD910
• Description: TRANSISTOR, PNP, TO-220
• Manufacturer: STMicroelectronics

Specifications of BD910

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 80V
• Power Dissipation Pd: 90W
• Dc Collector Current: -10A
• Transistor Case Style: TO-220
• No. Of Pins: 3
• Svhc: No SVHC (15-Dec-2010)
• Application: RoHS Compliant
• Dc Current Gain Hfe: 40
• Rohs Compliant: Yes

BD909 / BD910 / BD911 / BD912
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
For PNP types voltage and current values are negative.
Safe Operating Area
2/6
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
V
Symbol
R
CEO(sus)
CE(sat)
BE(sat)
V
h
thj-case
I
I
I
CBO
CEO
EBO
FE
BE
f
T
Thermal Resistance Junction-case
Collector Cut-off
Current (I
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Transition frequency
(I
C
B
= 0)
= 0)
Parameter
E
B
= 0)
= 0)
for BD909/910
for BD911/912
T
for BD909/910
for BD911/912
for BD909/910
for BD911/912
V
I
I
I
I
I
I
I
I
I
C
C
C
C
C
C
C
C
C
case
EB
= 100 mA
= 5 A
= 10 A
= 10 A
= 5 A
= 0.5 A
= 5 A
= 10 A
= 0.5 A
= 5 V
case
= 150
= 25
Test Conditions
o
C
o
C unless otherwise specified)
V
V
V
V
V
V
for BD911/912
Derating Curves
for BD909/910
I
I
V
V
V
I
V
V
B
B
B
CB
CB
CB
CB
CE
CE
CE
CE
CE
CE
CE
= 0.5 A
= 2.5 A
= 2.5 A
= 50 V
= 80 V
= 100 V
= 80 V
= 100 V
= 40 V
= 4 V
= 4 V
= 4 V
= 4 V
= 4 V
Max
Min.
100
80
40
15
5
3
Typ.
1.4
Max.
500
500
250
150
2.5
1.5
5
5
1
1
1
1
3
o
MHz
Unit
C/W
mA
mA
mA
mA
mA
V
V
V
V
V
V
A
A