BS170 NTE ELECTRONICS, BS170 Datasheet - Page 3

• Manufacturer Part Number: BS170
• Description: T- MOSFET N CHAN ENHAN
• Manufacturer: NTE ELECTRONICS

PULSE GENERATOR
2.0
1.6
1.2
0.8
0.4
0.8
2.0
1.6
1.2
0.4
0
50 W
50
0
Figure 3. V
Figure 1. Switching Test Circuit
V
Figure 5. Output Characteristics
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS(th)
10
V
T
0
in
J
50 W
, JUNCTION TEMPERATURE (°C)
Normalized versus Temperature
40 pF
20
50
1.0 MW
V
I
+25 V
D
DS
= 1.0 mA
125 W
100
30
= V
(V
GS
50 W ATTENUATOR
in
V
RESISTIVE SWITCHING
GS
Amplitude 10 Volts)
= 10 V
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9.0 V
8.0 V
7.0 V
5.0 V
6.0 V
4.0 V
20 dB
40
150
BS170
3
100
TO SAMPLING SCOPE
50 W INPUT
80
60
40
20
2.0
1.6
1.2
0.8
0.4
0
0
V
out
10
Figure 4. On−Region Characteristics
V
OUTPUT
INVERTED
V
DS
INPUT
Figure 6. Capacitance versus
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Drain−To−Source Voltage
Figure 2. Switching Waveforms
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.0
20
V
GS
V
V
in
= 0 V
out
10%
30
2.0
t
on
40
90%
PULSE
WIDTH
50
3.0
V
60
GS
C
t
90%
C
C
off
oss
= 10 V
iss
rss
50%
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
10%
4.0