NTE11 NTE ELECTRONICS, NTE11 Datasheet
NTE11
Manufacturer Part Number
NTE11
Description
TRANSISTOR,BJT,NPN,20V V(BR)CEO,5A I(C),TO-92
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE11.pdf
(2 pages)
Specifications of NTE11
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Description:
The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case de-
signed for use in low–frequency output amplifier, DC converter, and strobe applications.
Features:
D High Collector Current: I
D Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Power Dissipation, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
NTE12
NTE11
NTE11
NTE12
NTE11
NTE12
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EBO
CBO
D
C
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE11 (NPN) & NTE12 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5A Max
stg
A
= +25 C unless otherwise specified)
High Current Amplifier
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Symbol
I
CBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
CB
CB
= 10V, I
= 10V, I
Test Conditions
E
E
= 0
= 0
Min Typ Max Unit
–
–
–55 to +150 C
–
–
100
0.1
750mW
+150 C
nA
40V
27V
20V
18V
A
7V
5A
8A
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NTE11 Summary of contents
Page 1
... Silicon Complementary Transistors Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case de- signed for use in low–frequency output amplifier, DC converter, and strobe applications. Features: D High Collector Current Low Collector–Emitter Saturation Voltage Absolute Maximum Ratings: (T Collector– ...
Page 2
... Parameter Emitter Cutoff Current NTE11 NTE12 Collector–Emitter Voltage NTE11 NTE12 Emitter–Base Voltage DC Current Gain NTE11 NTE12 NTE11 Only Collector–Emitter Saturation Voltage NTE11 NTE12 Transition Frequency NTE11 NTE12 Collector Output Capacitance NTE11 NTE12 Note 1. Pulse measurement = +25 C unless otherwise specified) ...